Source: VT Silicon press release
VT Silicon, a fabless semiconductor startup in Atlanta, GA, today announced the industry’s first silicon-based power amplifier capable of meeting the stringent operating requirements of 4G wireless data transmissions. This breakthrough milestone was achieved after 2 ½ years of privately funded development by using the company’s patented Linearity Enhancement Technology (LET™) to achieve the power, efficiency, and linearity required by today’s battery-powered 4G broadband mobile devices. The use of silicon (Silicon Germanium, or SiGe) instead of the traditional, more expensive Gallium Arsenide (GaAs) allows a significantly lower cost device with a much higher level of integration. The new PA design has been shown to compete effectively with GaAs PAs on key 4G specifications such as EVM, PAE, and ACPR as defined by the WiMAX Forum™ and 3GPP.